Directed self-assembly of ABA triblock copolymer on chemical pattern via solvent annealing for sub-10nm fabrication
Dr. Shisheng Xiong
Institute for Molecular Engineering, the University of Chicago, and Argonne National Labs
Dr. Xiong obtained his Ph.D in nanoscience and microsystems in 2010. His Ph.D advisor was Prof. Jeffrey Brinker, a fellow of the National academy of engineering and a fellow of Sandia national labs. He is now assigned as a research associate professor in Institute of molecular engineering in Argonne national lab. His research interest is centered on DSA for sub-10nm lithography, in collaboration with Intel, Seagate, TEL and IMEC. He is a member of SPIE and AAAS.
Directed self-assembly (DSA) of block copolymers (bcp) is a leading strategy to pattern at sub-lithographic resolution in the technology roadmap for semiconductors. Integration of DSA with traditional top-down processes is a principal challenge, particularly with respect to the process used to anneal the polymer thin films. Here we report a DSA process based on lithographically defined chemical templates and solvent annealing to pattern and pattern transfer 8 nm features on a 16 nm pitch with precise controllable variation in pattern dimensions required for arranging bits of patterned media in circular tracks. Key innovations include: 1) implementing a quasi-equilibrium process using solvents in which the polymer assembles in the solvated state, 2) delineating and taking advantage of the thermodynamic properties of tri-block copolymer/solvent mixtures to allow for sub 10 nm features, and 3) optimizing a pattern transfer technology using reactive vapor phase precursors to selectively transform block copolymer domains into inorganic hard masks.
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