英国物理学会会士
皇家化学会会士
英国工程技术学会会士
研究员、博士生导师
联系方式：yezhou@szu.edu.cn
通讯地址：深圳市南山区深圳大学沧海校区致知楼409室, 518060
教育背景
2013年,香港城市大学,物理与材料科学,博士
2009年,香港科技大学,电子工程,硕士
2008年,南京大学,电子信息科学与技术,学士
工作经历
2015年6月至今，深圳大学高等研究院研究员
2013年8月 至 2015年5月，香港城市大学物理与材料科学系以及电子工程系，历任博士后、研究员、资深研究员
2009年6月 至 2009年8月,香港城市大学物理与材料科学系,助理研究员
研究兴趣
研究兴趣包括信息存储与传感器件，在Science、Chem. Rev.、Nat. Electron.、Nat. Commun.、Matter、Adv. Mater.、Appl. Phys. Rev.、Adv. Funct. Mater.、Nano Lett.、Mater. Today、Nano Today、IEEE EDL等期刊发表论文100余篇，被引用7000余次，H-因子45，获授权中国与美国发明专利20余项。
学术兼职
STAM副编辑（2019至今）
Applied Nanoscience副编辑（2019至今）
IEEE Access副编辑（2020至今）
Vacuum编委（2021至今）
Multifunctional Materials编委（2019至今）
Chemistry创刊编委（2019至今）
PLOS ONE编委（2019至今）
Energy Reviews编委（2022至今）
General Chemistry编委（2022至今）
Materials Horizons青年编委（2020至今）
The Innovation青年编辑（2022至今）
SmartMat青年编委（2021至今）
专著
1.Y. Zhou (Editor), Semiconducting Metal Oxide Thin-Film Transistors: Fundamentals and Applications (IOP Publishing, 2020). ISBN: 9780750325547
2.Y. Zhou (Editor), Optoelectronic Organic-Inorganic Semiconductor Heterojunctions (CRC Press, 2021). ISBN:9780367342128
3. S.-T. Han and Y. Zhou (Editor), Photo-Electroactive Nonvolatile Memories For Data Storage and Neuromorphic Computing (Woodhead Publishing, 2020). ISBN: 9780128197172
4.Y. Zhou and H.-H. Chou (Editor), Functional Tactile Sensors: Materials, Devices and Integrations (Woodhead Publishing, 2021). ISBN: 9780128206331
5.Y. Zhou and S.-T. Han (Editor), Ambipolar Materials and Devices (RSC Publishing, 2020). ISBN: 9781788018685
6.Y. Zhou and Y. Wang (Editor), Perovskite Quantum Dot: Synthesis, Properties and Applications (Springer Singapore, 2020). ISBN: 9789811566363
7.Y. Zhou and G. Ding (Editor), Polymer Nanocomposite Materials-Applications in Integrated Electronic Devices (Wiley-VCH, 2021).
代表性论文 （2018-2022）
34. R.-S. Chen, G. Ding, Z. Feng, S.-R. Zhang, W.-A. Mo, S.-T. Han and Y. Zhou,* MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts, Adv. Funct. Mater. 2022, 32, 2204288.
33. Y. Zhai, P. Xie, Z. Feng, C. Du, S.-T. Han and Y. Zhou,* 2D Heterostructure for High-Order Spatiotemporal Information Processing, Adv. Funct. Mater. 2022, 32, 2108440.
32. G. Ding, R.-S. Chen, P. Xie, B. Yang, G. Shang, Y. Liu, L. Gao, W.-A. Mo, K. Zhou, S.-T. Han and Y. Zhou,* Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System, Small 2022, 18, 2200185.
31. X. Liu, F. Wang,* J. Su, Y. Zhou* and S. Ramakrishna,* Bio-Inspired Three-Dimensional Artificial Neuromorphic Circuits, Adv. Funct. Mater. 2022, 32, 2113050.
30. G. Ding, B. Yang, R.-S. Chen, W.-A. Mo, K. Zhou, Y. Liu, G. Shang, Y. Zhai, S.-T. Han and Y. Zhou,* Reconfigurable 2D WSe2-Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity, Small 2021, 17, 2103175.
29.Y. Zhou,* Material foundation for future 5G technology, Acc. Mater. Res. 2021, 2, 306-310.
28.Y. Zhou,* Finding Means to Encourage Greatness: Words to Promote Group Cohesion, Matter 2021, 4, 1752-1754.
27.G. Ding, B. Yang, R.-S. Chen, K. Zhou, S.-T. Han and Y. Zhou,* MXenes for memristive and tactile sensory systems, Appl. Phys. Rev. 2021, 8, 011316.
26. X.-T. Liu, J.-R. Chen, Y. Wang, S.-T. Han* and Y. Zhou,* Building Functional Memories and Logic Circuits with Two-Dimensional Boron Nitride,Adv. Funct. Mater. 2021, 31, 2004733.
25. Y. Zhou and S.-T. Han,* Room-temperature magnetoelastic coupling, Science 2020, 367, 627.
24. L. Guo, S.-T. Han* and Y. Zhou,* Electromechanical Coupling Effects for Data Storage and Synaptic Devices, Nano Energy 2020, 77, 105156.
23. Y. Zhou,* Making allowances for COVID-19, Science 2020, 368, 98.
22. J.-Q. Yang, R. Wang, Y. Ren, J.-Y. Mao, Z.-P. Wang, Y. Zhou* and S.-T. Han,* Neuromorphic Engineering: From Biological to Spike-based Hardware Nervous Systems, Adv. Mater. 2020, 32, 2003610.
21. Z. Lv, Y. Wang, J. Chen, J. Wang, Y. Zhou* and S.-T. Han,* Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems, Chem. Rev. 2020, 120, 3941.
20. Y. Zhou,* The Samsung story, Nat. Electron. 2020, 3, 234.
19. Z.-P. Wang, Y. Wang, J. Yu, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, R. Wang, X. Zhao, W. Zheng and S.-T. Han,* Type-I Core–Shell ZnSe/ZnS Quantum Dot-Based Resistive Switching for Implementing Algorithm, Nano Lett. 2020, 20, 5562.
18. K. Zhou, C. Zhang, Z. Xiong, H.-Y. Chen, T. Li, G. Ding, B. Yang, Q. Liao, Y. Zhou* and S.-T. Han,* Template-Directed Growth of Hierarchical MOF Hybrid Arrays for Tactile Sensor, Adv. Funct. Mater. 2020, 30, 2001296.
17. J. Wang, Z. Lv, X. Xing, X. Li, Y. Wang, M. Chen, G. Pang, F. Qian, Y. Zhou* and S.-T. Han,* Optically Modulated Threshold Switching in Core-Shell Quantum Dot Based Memristive Device, Adv. Funct. Mater. 2020, 30, 1909114.
16. J.-Q. Yang, R. Wang, Z.-P. Wang, Q.-Y. Ma, J.-Y. Mao, Y. Ren, X. Yang, Y. Zhou* and S.-T. Han,* Leaky Integrate-and-Fire Neurons based on Perovskite Memristor for Spiking Neural Networks, Nano Energy 2020, 74, 104828.
15. Y. Ren, X. Yang, L. Zhou, J.-Y. Mao, S.-T. Han* and Y. Zhou,* Recent Advances in Ambipolar Transistors for Functional Applications, Adv. Funct. Mater. 2019, 29, 1902105.
14. C. Zhang, W. B. Ye, K. Zhou, H.-Y. Chen, J.-Q. Yang, G. Ding, X. Chen, Y. Zhou,* L. Zhou, F. Li and S.-T. Han,* Bio-inspired Artificial Sensory Nerve based on Nafion Memristor, Adv. Funct. Mater. 2019, 29, 1808783.
13. G. Ding, Y. Wang, G. Zhang, K. Zhou, K. Zeng, Z. Li, Y. Zhou,* C. Zhang, X. Chen and S.-T. Han,* 2D Metal-Organic Framework Nanosheets with Time-Dependent and Multi-Level Memristive Switching, Adv. Funct. Mater. 2019, 29, 1806637.
12. Z. Lv, M. Chen, F. Qian, V. A. L. Roy,* W. Ye, D. She, Y. Wang, Z.-X. Xu, Y. Zhou* and S.-T. Han,* Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes Modulation, Adv. Funct. Mater. 2019, 29, 1902374.
11.X. Chen, K. Zeng, X. Zhu, G. Ding, T. Zou, C. Zhang, K. Zhou, Y. Zhou* and S.-T. Han,* Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure, Adv. Sci. 2019, 6, 1900213.
10.L. Zhou, S. Yang, G. Ding,* J.-Q. Yang, Y. Ren, S.-R. Zhang, J.-Y. Mao, Y. Yang, Y. Zhou* and S.-T. Han,* Tunable Synaptic Behavior Realized in C3N Composite based Memristor, Nano Energy 2019, 58, 293.
9.H. Li, X. Jiang, W. Ye, H. Zhang, L. Zhou, F. Zhang, D. She, Y. Zhou* and S.-T. Han,* Fully Photon Modulated Heterostructure for Neuromorphic Computing, Nano Energy 2019, 65, 104000.
8. Z. Lv, Y. Zhou,* S.-T. Han* and V. A. L. Roy,* From biomaterials-based data storage to bio-inspired artificial synapse, Mater. Today 2018, 21, 537.
7. Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang, Y. Zhou* and S.-T. Han,* Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure, Adv. Mater. 2018, 30, 1803563.
6. Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen, Y. Zhou,* L. Zhou, X. Chen, V. A. L. Roy,* Z. Wang, Z. Xu, Y.-J. Zeng and S.-T. Han,* Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching, Adv. Mater. 2018, 30, 1800327.
5. Y. Wang, Z. Lv, J. Chen, Z. Wang, Y. Zhou,* L. Zhou, X. Chen and S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing, Adv. Mater. 2018, 30, 1802883.
4. X. Chen, Y. Zhou,* V. A. L. Roy* and S.-T. Han,* Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories, Adv. Mater. 2018, 30, 1703950.
3. Y. Ren, J.-Q. Yang, L. Zhou, J.-Y. Mao, S.-R. Zhang, Y. Zhou* and S.-T. Han*, Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites, Adv. Funct. Mater. 2018, 28, 1805599.
2. Y. Zhai, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, Y. Ren, V. A. L. Roy* and S. -T. Han*, Toward non-volatile photonic memories: Concept, material and design, Mater. Horiz. 2018, 5, 641.
1. Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou, Y. Zhou,* Y.-J. Zeng, S.-T. Han* and V. A. L. Roy,* Photo-Tunable Biomemory based on Light-Mediated Charge Trap, Adv. Sci. 2018, 5, 1800714.
