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The Institute for Advanced Study (IAS) has been established at Shenzhen University to provide both undergraduate and postgraduate education, focusing on interdisciplinary teaching and research. As a special platform at Shenzhen University, IAS seeks to

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IAS Student ZhuXin Published a Research Article in AMT

Post Date:2018-12-05 | Counts:

IAS student Zhu Xin from Ye Zhou’s Group recently publishes a paper titled “Controlled NonvolatileTransition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices” in Adv. Mater. Technol. (Impact Factor 4.622 ). Dr.Chen Xiaoli of the College of Electronic Science and Technology and Zhu Xin arethe co-first author of this paper, and the major participants of this workinclude Zhang Shirui (2015 undergraduate of IAS) and Pan Jingyi (2014 undergraduateof IAS,currently studies for amaster’s degree in the University of Pennsylvania, USA).

 

Graphene oxide(GO)-based non-volatile memory has triggered tremendous interest owing to itshigh mechanical flexibility, high optical transparency, low cost fabrication,and environmental friendly manufacture for future flexible and transparentelectronic devices. Various data storage types such aswrite-once-read-many-times (WORM), unipolar and bipolar characteristics withdifferent switching mechanisms have been demonstrated for GO-based systems,however, challenges still exist in controlling of the memory performancestowards applications for multifunctional devices. Here, polyoxometalates(POMs), a type of molecular oxide cluster, is co-assembled into the structureof the GO-based memory through electrostatic layer-by-layer depositionapproach. Assisted by the catalytic activity of the POMs, the GO can be reducedto reduce graphene oxide (RGO) under UV irradiation. By this catalyticphoto-reduction reaction, two types of memory characteristics can be obtainedincluding the WORM derived from the GO-based memory cell and the rewritablebipolar resistive switching arising from the RGO-based counterpart.Experimental and analytical results verify that the transition between the WORMand bipolar resistive switching is associated with the modulation of the interfacebarrier of POM and GO junction. Furthermore, charge trapping/de-trappingprocess is also proposed to account for the mechanism of the two memory types.This work offers valuable insight into the new design of tunable memorycharacteristics targeting for the multifunctional electronic devices andemphasizes the significant role of POMs in modifying the interface features.

 

Thiswork is supported by the grants from Natural Science Foundation of China, theScience and Technology Innovation Commission of Shenzhen, Shenzhen PeacockTechnological Innovation Project, Guangdong Provincial Department of Scienceand Technology, the Department of Education of Guangdong Province, and theNatural Science Foundation of SZU.

 

Refhttps://pubs.rsc.org/en/content/articlelanding/2018/tc/c8tc05030a#!divAbstract

 

Figure 1 Zhu Xin is fabricatingthe device and Dr. Chen is instructing in lab.

 

Figure 2 Electricalperformances of device, Raman mapping and KPFM characteristics.