College Introduction

The Institute for Advanced Study (IAS) has been established at Shenzhen University to provide both undergraduate and postgraduate education, focusing on interdisciplinary teaching and research. As a special platform at Shenzhen University, IAS seeks to

People

Ye Zhou

Ph.D., Research Scientist

Email: yezhou@szu.edu.cn

Address:Room 358, Administration Building, Shenzhen University,Nanshan District, Shenzhen, Guangdong, China, 518060

Group website: http://www.escience.cn/people/FMEG/index.html

 

EDUCATION:

2013, City University of Hong Kong, Physics and Materials Science, PhD

2009, Hong Kong University of Science and Technology, Electronic Engineering, MSc

2008, Nanjing University, Electronic Science and Engineering, BSc

 

WORKING EXPERIENCES

2013.8 – 2015.5 Post-doctoral Fellow, Department of Physics and Materials Science, City University of Hong Kong

2009.6 – 2009.8  Research Assistant, Department of Physics and Materials Science, City University of Hong Kong

 

RESEARCH INTERESTS

Flexible and printed electronics, organic/inorganic semiconductors, surface and interface physics, nanostructured materials, nano-scale devices for technological applications (logic circuits, data storage, energy-harvesting, photonics, sensors)

 

 

PUBLICATIONS

Book Chpaters

1. Y. Zhou et al., Nanocomposite Dielectric Materials for Organic Flexible Electronics. In Nanocrystalline Materials (Second Edition), Tjong, S.-C., Ed. Elsevier: Oxford, 2014; 195-220.

2. Y. Zhou et al., Flexible Floating-Gate Memory. In Flexible and Stretchable Medical Devices. Kuniharu Takei, Wiley-VCH, 2018; 215-228

 

Papers

(Corresponding author)

1.Z. Lv, Y. Zhou,* S. -T. Han* and V. A. L. Roy,*  From biomaterials-based data storage to bio-inspired artificial synapse, Mater. Today 2018, 21, 537.

2.Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang, Y. Zhou* and S.-T. Han*, Infrared-sensitive memory based on direct-grown MoS2-upconversion nanoparticle heterostructure, Adv. Mater. 2018, 30, 1803563.

3.Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen, Y. Zhou,* L. Zhou, X. Chen, V. A. L. Roy,* Z. Wang, Z. Xu, Y.-J. Zeng and S.-T. Han,* Synergies of electrochemical metallization and valance change in all-inorganic perovskite quantum dots for resistive switching, Adv. Mater. 2018, 30, 1800327.

4.Y. Wang, Z. Lv, J. Chen, Z. Wang, Y. Zhou,* L. Zhou, X. Chen and S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing, Adv. Mater. 2018, 30, 1802883.

5.X. Chen, Y. Zhou,* V. A. L. Roy* and S. -T. Han,* Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories, Adv. Mater. 2018, 30, 1703950.

6.Y. Ren, J.-Q. Yang, L. Zhou, J.-Y. Mao, S.-R. Zhang, Y. Zhou* and S.-T. Han*, Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites, Adv. Funct. Mater. 2018, 28, 1805599.

7. G. Ding, Y. Wang, G. Zhang, K. Zhou, K. Zeng, Z. Li, Y. Zhou,* C. Zhang, X. Chen and  S.-T. Han,* 2D Metal-Organic Framework Nanosheets with Time-Dependent and Multi-Level Memristive Switching, Adv. Funct. Mater.2019, 29, 1806637.

8. C. Zhang, W. B. Ye, K. Zhou, H.-Y. Chen, J.-Q. Yang, G. Ding, X. Chen, Y. Zhou,* L. Zhou, F. Li and S.-T. Han,*Bio-inspired Artificial Sensory Nerve based on Nafion Memristor, Adv. Funct. Mater. 2019, 29, 1808783.

9.L. Zhou, S. Yang, G. Ding,* J.-Q. Yang, Y. Ren, S.-R. Zhang, J.-Y. Mao, Y. Yang, Y. Zhou* and S.-T. Han,* Tunable Synaptic Behavior Realized in C3N Composite based Memristor, Nano Energy 2019, 58, 293.

10.Y. Zhai, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, Y. Ren, V. A. L. Roy* and S. -T. Han*, Toward non-volatile photonic memories: Concept, material and design, Mater. Horiz. 2018, 5, 641.

11.X. Chen, K. Zeng, X. Zhu, G. Ding, T. Zou, C. Zhang, K. Zhou, Y. Zhou* and S.-T. Han,* Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure, Adv. Sci. 2019, 6, 1900213.

12.Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou, Y. Zhou*, Y.-J. Zeng, S.-T. Han* and V. A. L. Roy,* Photo-Tunable Biomemory based on Light-Mediated Charge Trap, Adv. Sci.2018, 5, 1800714.

 

(First author)

1. Y. Zhou et al., An upconverted photonic nonvolatile memory. Nat. Commun. 2014, 5, 4720.

2. Y. Zhou et al., Controlled Ambipolar Charge Transport Through a Self-Assembled Gold Nanoparticle Monolayer. Adv. Mater. 2012, 24, 1247.

3.Y. Zhou, M. Zhang, Z. Guo, L. Miao, S.-T. Han, H. Liu, Z. Wang, H. Zhang and Z. Peng, Recent advances in black phosphorus-based photonics, electronics, sensors and energy devices, Mater. Horiz. 2017, 4, 997.

4. S.-T. Han,+ Y. Zhou,+ et al., Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory. Adv. Mater. 2013, 25, 872-877. (+Equal contribution)

5. Y. Zhou, L. Zhou, Y. Yan, S.-T. Han, J. Zhuang,  Q.-J. Sun and V. A. L. Roy, Real-time storage of thermal signal in organic memory with floating core-shell nanoparticles. J. Mater. Chem. C 2017, 5, 8415.

6. Y. Zhou et al., Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends. Sci. Rep. 2015, 5, 10683.

7. Y. Zhou et al., Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids. Sci. Rep. 2015, 5, 9446.

8. Y. Zhou et al., The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer. Nanoscale 2013, 5, 1972.

9. Y. Zhou et al., Flexible organic/inorganic heterojunction transistors with low operating voltage. J. Mater. Chem. C 2013, 1, 7073.

10. Y. Zhou et al., Solution processed molecular floating gate for flexible flash memories. Sci. Rep. 2013, 3, 3093.

11. Y. Zhou et al., Ambipolar organic light-emitting electrochemical transistor based on a heteroleptic charged iridium(III) complex. Appl. Phys. Lett. 2013, 102, 083301.

12. Y. Zhou et al., A low voltage programmable unipolar inverter with a gold nanoparticle monolayer on plastic. Nanotechnology 2013, 24, 205202.

13. Y. Zhou et al., Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism. Sci. Rep. 2013, 3, 2319.

14. S.-T. Han,+ Y. Zhou,+ et al., Poly(3-hexylthiophene)/Gold Nanoparticle Hybrid System with Enhanced Photo Response for Light Controlled Electronic Devices. Particle & Particle Systems Characterization 2013, 30, 599. (+Equal contribution)

15. Y. Zhou et al., Polymer-nanoparticle hybrid dielectrics for flexible transistors and inverters. J. Mater. Chem. 2012, 22, 4060.

16. Y. Zhou et al., Functional high-k nanocomposite dielectrics for flexible transistors and inverters with excellent mechanical properties. J. Mater. Chem. 2012, 22, 14246.

17. Y. Zhou et al., Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate). Nanotechnology 2012, 23, 344014.

18. Y. Zhou et al., Low temperature processed bilayer dielectrics for low-voltage flexible saturated load inverters. Appl. Phys. Lett. 2011, 98, 092904.