College Introduction

The Institute for Advanced Study (IAS) has been established at Shenzhen University to provide both undergraduate and postgraduate education, focusing on interdisciplinary teaching and research. As a special platform at Shenzhen University, IAS seeks to
People

Ye Zhou

Ph.D., Research Scientist

Email: yezhou@szu.edu.cn

Address：Room 358, Administration Building, Shenzhen University,Nanshan District, Shenzhen, Guangdong, China, 518060

Group website: http://www.escience.cn/people/FMEG/index.html

 

EDUCATION:

2013, City University of Hong Kong, Physics and Materials Science, PhD

2009, Hong Kong University of Science and Technology, Electronic Engineering, MSc

2008, Nanjing University, Electronic Science and Engineering, BSc

 

WORKING EXPERIENCES

2013.8 – 2015.5 Post-doctoral Fellow, Department of Physics and Materials Science, City University of Hong Kong

2009.6 – 2009.8  Research Assistant, Department of Physics and Materials Science, City University of Hong Kong

 

RESEARCH INTERESTS

Flexible and printed electronics, organic/inorganic semiconductors, surface and interface physics, nanostructured materials, nano-scale devices for technological applications (logic circuits, data storage, energy-harvesting, photonics, sensors)

 

SELECTED PUBLICATIONS

1.Z. Lv, Y. Zhou,* S. -T. Han* and V. A. L. Roy,*  From biomaterials-based data storage to bio-inspired artificial synapse, Mater. Today 2018, 21, 537.

2.Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang, Y. Zhou* and S.-T. Han*, Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure, Adv. Mater. 2018, 30, 1803563.

3.Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen, Y. Zhou,* L. Zhou, X. Chen, V. A. L. Roy,* Z. Wang, Z. Xu, Y.-J. Zeng and S.-T. Han,* Synergies of electrochemical metallization and valance change in all-inorganic perovskite quantum dots for resistive switching, Adv. Mater. 2018, 30, 1800327.

4.Y. Wang, Z. Lv, J. Chen, Z. Wang, Y. Zhou,* L. Zhou, X. Chen and S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing, Adv. Mater. 2018, 30, 1802883.

5.X. Chen, Y. Zhou,* V. A. L. Roy* and S. -T. Han,* Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories, Adv. Mater. 2018, 30, 1703950.

6.Y. Ren, J.-Q. Yang, L. Zhou, J.-Y. Mao, S.-R. Zhang, Y. Zhou* and S.-T. Han*, Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites, Adv. Funct. Mater. 2018, 28, 1805599.

7. G. Ding, Y. Wang, G. Zhang, K. Zhou, K. Zeng, Z. Li, Y. Zhou,* C. Zhang, X. Chen and  S.-T. Han,* 2D Metal-Organic Framework Nanosheets with Time-Dependent and Multi-Level Memristive Switching, Adv. Funct. Mater.2019, 29, 1806637.

8. C. Zhang, W. B. Ye, K. Zhou, H.-Y. Chen, J.-Q. Yang, G. Ding, X. Chen, Y. Zhou,* L. Zhou, F. Li and S.-T. Han,*Bio-inspired Artificial Sensory Nerve based on Nafion Memristor, Adv. Funct. Mater. 2019, 29, 1808783.

9. Z. Lv, M. Chen, F. Qian, V. A. L. Roy,* W. Ye, D. She, Y. Wang, Z.-X. Xu, Y. Zhou* and S.-T. Han,* Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes Modulation, Adv. Funct. Mater. 2019, 29, 1902374.

10.Y. Ren, X. Yang, L. Zhou, J.-Y. Mao, S.-T. Han* and Y. Zhou,* Recent Advances in Ambipolar Transistors for Functional Applications, Adv. Funct. Mater. 2019, 29, 1902105.

11.L. Zhou, S. Yang, G. Ding,* J.-Q. Yang, Y. Ren, S.-R. Zhang, J.-Y. Mao, Y. Yang, Y. Zhou* and S.-T. Han,* Tunable Synaptic Behavior Realized in C3N Composite based Memristor, Nano Energy 2019, 58, 293.

12.Y. Zhai, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, Y. Ren, V. A. L. Roy* and S. -T. Han*, Toward non-volatile photonic memories: Concept, material and design, Mater. Horiz. 2018, 5, 641.

13Y. Zhou, M. Zhang, Z. Guo, L. Miao, S.-T. Han, H. Liu, Z. Wang, H. Zhang and Z. Peng, Recent advances in black phosphorus-based photonics, electronics, sensors and energy devices, Mater. Horiz. 2017, 4, 997.

14.X. Chen, K. Zeng, X. Zhu, G. Ding, T. Zou, C. Zhang, K. Zhou, Y. Zhou* and S.-T. Han,* Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure, Adv. Sci. 2019, 6, 1900213.

15.Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou, Y. Zhou*, Y.-J. Zeng, S.-T. Han* and V. A. L. Roy,* Photo-Tunable Biomemory based on Light-Mediated Charge Trap, Adv. Sci.2018, 5, 1800714.