College Introduction

The Institute for Advanced Study (IAS) has been established at Shenzhen University to provide both undergraduate and postgraduate education, focusing on interdisciplinary teaching and research. As a special platform at Shenzhen University, IAS seeks to

Postgraduate Course

Ye Zhou

Ph.D., Research Scientist


Address:Room 358, Administration Building, Shenzhen University,Nanshan District, Shenzhen, Guangdong, China, 518060

Group website:



2013, City University of Hong Kong, Physics and Materials Science, PhD

2009, Hong Kong University of Science and Technology, Electronic Engineering, MSc

2008, Nanjing University, Electronic Science and Engineering, BSc



2013.8 – 2015.5 Post-doctoral Fellow, Department of Physics and Materials Science, City University of Hong Kong

2009.6 – 2009.8  Research Assistant, Department of Physics and Materials Science, City University of Hong Kong



Flexible and printed electronics, organic/inorganic semiconductors, surface and interface physics, nanostructured materials, nano-scale devices for technological applications (logic circuits, data storage, energy-harvesting, photonics, sensors)



1.Y. Zhou (Editor), Semiconducting Metal Oxide Thin-Film Transistors: Fundamentals and Applications (IOP Publishing, 2020). ISBN: 9780750325547

2.Y. Zhou (Editor), Optoelectronic Organic-Inorganic Semiconductor Heterojunctions (CRC Press, 2021). ISBN:9780367342128

3. S.-T. Han and Y. Zhou (Editor), Photo-Electroactive Nonvolatile Memories For Data Storage and Neuromorphic Computing (Woodhead Publishing, 2020). ISBN: 9780128197172

4.Y. Zhou and H.-H. Chou (Editor), Functional Tactile Sensors: Materials, Devices and Integrations (Woodhead Publishing, 2021). ISBN: 9780128206331

5.Y. Zhou and S.-T. Han (Editor), Ambipolar Materials and Devices (RSC Publishing, 2020). ISBN: 9781788018685

6.Y. Zhou and Y. Wang (Editor), Perovskite Quantum Dot: Synthesis, Properties and Applications (Springer Singapore, 2020). ISBN: 9789811566363

7.Y. Zhou and G. Ding (Editor), Polymer Nanocomposite Materials-Applications in Integrated Electronic Devices (Wiley-VCH, 2021).


27.G. Ding, B. Yang, R.-S. Chen, K. Zhou, S.-T. Han and Y. Zhou,* MXenes for memristive and tactile sensory systems, Appl. Phys. Rev. 2021, 8, 011316.

26. X.-T. Liu, J.-R. Chen, Y. Wang, S.-T. Han* and Y. Zhou,* Building Functional Memories and Logic Circuits with Two-Dimensional Boron Nitride, Adv. Funct. Mater. 2021, 31, 2004733.

25. Y. Zhou and S.-T. Han,* Room-temperature magnetoelastic coupling, Science 2020, 367, 627.

24. L. Guo, S.-T. Han* and Y. Zhou,* Electromechanical Coupling Effects for Data Storage and Synaptic Devices, Nano Energy 2020, 77, 105156.

23. Y. Zhou,* Making allowances for COVID-19, Science 2020, 368, 98.

22. J.-Q. Yang, R. Wang, Y. Ren, J.-Y. Mao, Z.-P. Wang, Y. Zhou* and S.-T. Han,* Neuromorphic Engineering: From Biological to Spike-based Hardware Nervous Systems, Adv. Mater. 2020, 32, 2003610.

21. Z. Lv, Y. Wang, J. Chen, J. Wang, Y. Zhou* and S.-T. Han,* Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems, Chem. Rev.  2020, 120, 3941.

20. Y. Zhou,* The Samsung story, Nat. Electron. 2020, 3, 234.

19. Z.-P. Wang, Y. Wang, J. Yu, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, R. Wang, X. Zhao, W. Zheng and S.-T. Han,* Type-I Core–Shell ZnSe/ZnS Quantum Dot-Based Resistive Switching for Implementing Algorithm, Nano Lett. 2020, 20, 5562.

18. K. Zhou, C. Zhang, Z. Xiong, H.-Y. Chen, T. Li, G. Ding, B. Yang, Q. Liao, Y. Zhou* and S.-T. Han,* Template-Directed Growth of Hierarchical MOF Hybrid Arrays for Tactile Sensor, Adv. Funct. Mater. 2020, 30, 2001296.

17. J. Wang, Z. Lv, X. Xing, X. Li, Y. Wang, M. Chen, G. Pang, F. Qian, Y. Zhou* and S.-T. Han,* Optically Modulated Threshold Switching in Core-Shell Quantum Dot Based Memristive Device, Adv. Funct. Mater. 2020, 30, 1909114.

16. J.-Q. Yang, R. Wang, Z.-P. Wang, Q.-Y. Ma, J.-Y. Mao, Y. Ren, X. Yang, Y. Zhou* and S.-T. Han,* Leaky Integrate-and-Fire Neurons based on Perovskite Memristor for Spiking Neural Networks, Nano Energy 2020, 74, 104828.

15. Y. Ren, X. Yang, L. Zhou, J.-Y. Mao, S.-T. Han* and Y. Zhou,* Recent Advances in Ambipolar Transistors for Functional Applications, Adv. Funct. Mater. 2019, 29, 1902105.

14. C. Zhang, W. B. Ye, K. Zhou, H.-Y. Chen, J.-Q. Yang, G. Ding, X. Chen, Y. Zhou,* L. Zhou, F. Li and S.-T. Han,* Bio-inspired Artificial Sensory Nerve based on Nafion Memristor, Adv. Funct. Mater. 2019, 29, 1808783.

13. G. Ding, Y. Wang, G. Zhang, K. Zhou, K. Zeng, Z. Li, Y. Zhou,* C. Zhang, X. Chen and  S.-T. Han,* 2D Metal-Organic Framework Nanosheets with Time-Dependent and Multi-Level Memristive Switching, Adv. Funct. Mater. 2019, 29, 1806637.

12. Z. Lv, M. Chen, F. Qian, V. A. L. Roy,* W. Ye, D. She, Y. Wang, Z.-X. Xu, Y. Zhou* and S.-T. Han,* Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes Modulation, Adv. Funct. Mater. 2019, 29, 1902374.

11.X. Chen, K. Zeng, X. Zhu, G. Ding, T. Zou, C. Zhang, K. Zhou, Y. Zhou* and S.-T. Han,* Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure, Adv. Sci. 2019, 6, 1900213.

10.L. Zhou, S. Yang, G. Ding,* J.-Q. Yang, Y. Ren, S.-R. Zhang, J.-Y. Mao, Y. Yang, Y. Zhou* and S.-T. Han,* Tunable Synaptic Behavior Realized in C3N Composite based Memristor, Nano Energy 2019, 58, 293.

9.H. Li, X. Jiang, W. Ye, H. Zhang, L. Zhou, F. Zhang, D. She, Y. Zhou* and S.-T. Han,* Fully Photon Modulated Heterostructure for Neuromorphic Computing, Nano Energy 2019, 65, 104000.

8. Z. Lv, Y. Zhou,* S.-T. Han* and V. A. L. Roy,* From biomaterials-based data storage to bio-inspired artificial synapse, Mater. Today 2018, 21, 537.

7. Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang, Y. Zhou* and S.-T. Han,* Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure, Adv. Mater. 2018, 30, 1803563.

6. Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen, Y. Zhou,* L. Zhou, X. Chen, V. A. L. Roy,* Z. Wang, Z. Xu, Y.-J. Zeng and S.-T. Han,* Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching, Adv. Mater. 2018, 30, 1800327.

5. Y. Wang, Z. Lv, J. Chen, Z. Wang, Y. Zhou,* L. Zhou, X. Chen and S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing, Adv. Mater. 2018, 30, 1802883.

4. X. Chen, Y. Zhou,* V. A. L. Roy* and S.-T. Han,* Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories, Adv. Mater. 2018, 30, 1703950.

3. Y. Ren, J.-Q. Yang, L. Zhou, J.-Y. Mao, S.-R. Zhang, Y. Zhou* and S.-T. Han*, Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites, Adv. Funct. Mater. 2018, 28, 1805599.

2. Y. Zhai, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, Y. Ren, V. A. L. Roy* and S. -T. Han*, Toward non-volatile photonic memories: Concept, material and design, Mater. Horiz. 2018, 5, 641.

1. Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou, Y. Zhou,* Y.-J. Zeng, S.-T. Han* and V. A. L. Roy,* Photo-Tunable Biomemory based on Light-Mediated Charge Trap, Adv. Sci. 2018, 5, 1800714.