学院简介

深圳大学高等研究院是深圳大学于2014年成立的一个包含本科与研究生培养、侧重跨学科教学与学术研究的校内综合办学单位。作为深圳大学内部探索全面改革创新的学术特区,高等研究院与香港和海外著名高校合作,借鉴国内外研究型大学通行的管理模式,引进具有一流视野的资深教授和发展潜力的青年教师,营造与国际接轨的学术氛围和培养环境,开展卓越的教学、研究和管理工作。

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Yanyun Ren(Ye Zhou's group)



Phd

Email: renyy889@nenu.edu.cn


Education:

2016.9-2019.6  Northeast Normal University  Condensed Matter Physics        PhD

2013.9-2016.6  Shanghai University Pattern Recognition and Intelligent System   M.S.

2009.9-2013.6  Jilin Jianzhu University  Architecture Electrictity and Intelligence B.S.


Research Interests:

Resistive memory design、fabrication and its application in neuromorphic computing.

Resistive memory(RRAM), as a kind of non-linear electronic component, has the characteristics of continuous adjustable resistance and long-term maintenance, which are highly similar to the biological synapstic plasticity. Its structure, power consumption, density and switching speed are also comparable with synapstic, which has been considered as the best candidate for synapse emulation and pattern recognition. However, the research is limited into more high-order and complex synaptic emulation because of the undefined resistive switching mechanism and the singleness of synaptic plasticity simulation. Hense, it is urgent to explore the resistive switching mechanism, clear the law of parameter evolution and enrich the synaptic plasticity learning rules’ simulation. Firstly, I will construct a mathematical analysis model to explore the mechanism of the resistive switching. Then, based on the model study, I will use the synaptic plasticity with time-dependent plasticity and frequency-dependent plasticity in the further pattern recognition research.


Research Projects:

1, Program of National Natural Science Foundation of China《Study on the control of gradual multi-state switching based on memristive n-Transistor/1-Resistor structure for artificial synapse》(61774031) (2018.1-2021.12),63, participation, in the research

2, Program of National Natural Science Foundation of China《Study on the memristive behaviors of porous amorphous carbon films and the realization of ultralow power synaptic devices》(51872043)(2019.1-2022.12),60, participation, in the research

3, Program of National Natural Science Foundation of China《The study of optoelectronic memristor effect and photo-gated artificial synaptic device based on the oxides/ noble metal system》(11974072) (2020.1-2023.12),63, participation, in the research


Publications and Patents:

1, Y. Y. Ren, V. Milo, Z. Q. Wang, et al., Analytical Modeling of Organic-Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition. Advanced Theory and Simulations. 2018, 1, 1700035. (front cover),

2, Y. Y. Ren, H. L. Ma, W. Wang, et al., Cycling-induced Degradation of Organic-Inorganic Perovskite-based Resistive Switching Memory. Advanced Materials Technologies. 2019, 4, 1800238. (frontispiece)

3, Y. Y. Ren, Y. Tao, X. H. Li, et al., Analytical Modeling of Electrochemical Metallization Memory Device with Dual-layer structure of Ag/AgInSbTe/Amorphous C/Pt. Semiconductor Science and Technology. 2020, 3, 5. ,

4, Y. Lin, C. Wang, Y. Y. Ren, et al., Analog–Digital Hybrid Memristive Devices for Image Pattern Recognition with Tunable Learning Accuracy and Speed. Small Methods. 2019, 3, 1900160. (back cover)

5, Z. Q. Wang, T. Zeng, Y. Y. Ren, et al., Toward a generalized Bienenstock–Cooper–Munro rule for spatiotemporal learning via triplet-STDP in memristive devices. Nature Communications. 2020, 11, 1510.


Conferences and Presentations:

2018 Chinese Vacuum Society Annual Meeting Changchun, China Northeast Normal University Poster : Analytical Modeling of Organic-Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition