Group website: http://www.escience.cn/people/FMEG/index.html
EDUCATION:
2013, City University of Hong Kong, Physics and Materials Science, PhD
2009, Hong Kong University of Science and Technology, Electronic Engineering, MSc
2008, Nanjing University, Electronic Science and Engineering, BSc
WORKING EXPERIENCES
2013.8 – 2015.5 Post-doctoral Fellow, Department of Physics and Materials Science, City University of Hong Kong
2009.6 – 2009.8 Research Assistant, Department of Physics and Materials Science, City University of Hong Kong
RESEARCH INTERESTS
Flexible and printed electronics, organic/inorganic semiconductors, surface and interface physics, nanostructured materials, nano-scale devices for technological applications (logic circuits, data storage, energy-harvesting, photonics, sensors)
EDITED BOOk
1.Y. Zhou(Editor), Semiconducting Metal Oxide Thin-Film Transistors: Fundamentals and Applications (IOP Publishing, 2020). ISBN: 9780750325547
2.Y. Zhou(Editor), Optoelectronic Organic-Inorganic Semiconductor Heterojunctions (CRC Press, 2021). ISBN:9780367342128
3. S.-T. Han andY. Zhou(Editor), Photo-Electroactive Nonvolatile Memories For Data Storage and Neuromorphic Computing (Woodhead Publishing, 2020). ISBN: 9780128197172
4.Y. Zhouand H.-H. Chou (Editor), Functional Tactile Sensors: Materials, Devices and Integrations (Woodhead Publishing, 2021). ISBN: 9780128206331
5.Y. Zhouand S.-T. Han (Editor), Ambipolar Materials and Devices (RSC Publishing, 2020). ISBN: 9781788018685
6.Y. Zhouand Y. Wang (Editor), Perovskite Quantum Dot: Synthesis, Properties and Applications (Springer Singapore, 2020). ISBN: 9789811566363
7.Y. Zhouand G. Ding (Editor), Polymer Nanocomposite Materials-Applications in Integrated Electronic Devices (Wiley-VCH, 2021).
SELECTED PUBLICATIONS
27.G. Ding, B. Yang, R.-S. Chen, K. Zhou, S.-T. Han andY. Zhou,* MXenes for memristive and tactile sensory systems,Appl. Phys. Rev.2021, 8, 011316.
26. X.-T. Liu, J.-R. Chen, Y. Wang, S.-T. Han* andY. Zhou,* Building Functional Memories and Logic Circuits with Two-Dimensional Boron Nitride,Adv. Funct.Mater.2021, 31, 2004733.
25.Y. Zhouand S.-T. Han,* Room-temperature magnetoelastic coupling,Science2020, 367, 627.
24. L. Guo, S.-T. Han* andY. Zhou,* Electromechanical Coupling Effects for Data Storage and Synaptic Devices,Nano Energy2020, 77, 105156.
23.Y. Zhou,* Making allowances for COVID-19,Science2020, 368, 98.
22. J.-Q. Yang, R. Wang, Y. Ren, J.-Y. Mao, Z.-P. Wang,Y. Zhou* and S.-T. Han,* Neuromorphic Engineering: From Biological to Spike-based Hardware Nervous Systems,Adv. Mater.2020, 32, 2003610.
21. Z. Lv, Y. Wang, J. Chen, J. Wang,Y. Zhou* and S.-T. Han,* Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems,Chem. Rev. 2020, 120, 3941.
20.Y. Zhou,* The Samsung story,Nat. Electron.2020, 3, 234.
19. Z.-P. Wang, Y. Wang, J. Yu, J.-Q. Yang,Y. Zhou,* J.-Y. Mao, R. Wang, X. Zhao, W. Zheng and S.-T. Han,* Type-I Core–Shell ZnSe/ZnS Quantum Dot-Based Resistive Switching for Implementing Algorithm,Nano Lett.2020, 20, 5562.
18. K. Zhou, C. Zhang, Z. Xiong, H.-Y. Chen, T. Li, G. Ding, B. Yang, Q. Liao,Y. Zhou* and S.-T. Han,* Template-Directed Growth of Hierarchical MOF Hybrid Arrays for Tactile Sensor,Adv. Funct. Mater.2020, 30, 2001296.
17. J. Wang, Z. Lv, X. Xing, X. Li, Y. Wang, M. Chen, G. Pang, F. Qian,Y. Zhou* and S.-T. Han,* Optically Modulated Threshold Switching in Core-Shell Quantum Dot Based Memristive Device,Adv. Funct. Mater.2020, 30, 1909114.
16. J.-Q. Yang, R. Wang, Z.-P. Wang, Q.-Y. Ma, J.-Y. Mao, Y. Ren, X. Yang,Y. Zhou* and S.-T. Han,* Leaky Integrate-and-Fire Neurons based on Perovskite Memristor for Spiking Neural Networks,Nano Energy2020, 74, 104828.
15. Y. Ren, X. Yang, L. Zhou, J.-Y. Mao, S.-T. Han* andY. Zhou,* Recent Advances in Ambipolar Transistors for Functional Applications,Adv. Funct. Mater.2019, 29, 1902105.
14. C. Zhang, W. B. Ye, K. Zhou, H.-Y. Chen, J.-Q. Yang, G. Ding, X. Chen,Y. Zhou,* L. Zhou, F. Li and S.-T. Han,* Bio-inspired Artificial Sensory Nerve based on Nafion Memristor,Adv. Funct. Mater.2019, 29, 1808783.
13. G. Ding, Y. Wang, G. Zhang, K. Zhou, K. Zeng, Z. Li,Y. Zhou,* C. Zhang, X. Chen and S.-T. Han,* 2D Metal-Organic Framework Nanosheets with Time-Dependent and Multi-Level Memristive Switching,Adv. Funct. Mater.2019, 29, 1806637.
12. Z. Lv, M. Chen, F. Qian, V. A. L. Roy,* W. Ye, D. She, Y. Wang, Z.-X. Xu,Y. Zhou* and S.-T. Han,* Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes Modulation,Adv. Funct. Mater.2019, 29, 1902374.
11.X. Chen, K. Zeng, X. Zhu, G. Ding, T. Zou, C. Zhang, K. Zhou,Y. Zhou* and S.-T. Han,* Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure,Adv. Sci.2019, 6, 1900213.
10.L. Zhou, S. Yang, G. Ding,* J.-Q. Yang, Y. Ren, S.-R. Zhang, J.-Y. Mao, Y. Yang,Y. Zhou* and S.-T. Han,* Tunable Synaptic Behavior Realized in C3N Composite based Memristor,Nano Energy2019, 58, 293.
9.H. Li, X. Jiang, W. Ye, H. Zhang, L. Zhou, F. Zhang, D. She,Y. Zhou* and S.-T. Han,* Fully Photon Modulated Heterostructure for Neuromorphic Computing,Nano Energy2019, 65, 104000.
8. Z. Lv,Y. Zhou,* S.-T. Han* and V. A. L. Roy,* From biomaterials-based data storage to bio-inspired artificial synapse,Mater. Today2018, 21, 537.
7. Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang,Y. Zhou* and S.-T. Han,* Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure,Adv. Mater.2018, 30, 1803563.
6. Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen,Y. Zhou,* L. Zhou, X. Chen, V. A. L. Roy,* Z. Wang, Z. Xu, Y.-J. Zeng and S.-T. Han,* Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching,Adv. Mater.2018, 30, 1800327.
5. Y. Wang, Z. Lv, J. Chen, Z. Wang,Y. Zhou,* L. Zhou, X. Chen and S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing,Adv. Mater.2018, 30, 1802883.
4. X. Chen,Y. Zhou,* V. A. L. Roy* and S.-T. Han,* Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories,Adv. Mater.2018, 30, 1703950.
3. Y. Ren, J.-Q. Yang, L. Zhou, J.-Y. Mao, S.-R. Zhang,Y. Zhou* and S.-T. Han*, Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites,Adv. Funct. Mater.2018, 28, 1805599.
2. Y. Zhai, J.-Q. Yang,Y. Zhou,* J.-Y. Mao, Y. Ren, V. A. L. Roy* and S. -T. Han*, Toward non-volatile photonic memories: Concept, material and design,Mater. Horiz.2018, 5, 641.
1. Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou,Y. Zhou,* Y.-J. Zeng, S.-T. Han* and V. A. L. Roy,* Photo-Tunable Biomemory based on Light-Mediated Charge Trap,Adv. Sci.2018, 5, 1800714.