loading..
Home   >   News   >   Academic Achievements   >  

Content

Ye Zhou's team published a research paper on dual-mode reconfigurable split-gate logic transistor in the Journal of Physical Chemistry Letters

2024-09-27

On September 24, 2024, Zhou's team published a paper entitled "Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration" in the Journal of Physical Chemistry Letters. This research paper exploresdual-mode reconfigurable split-gate logic transistor through Van der Waals integration. Xue Chen and Haozhe Xue are the first authors. Ye Zhou, Feng Li and Chi-Ching Kuo are the corresponding authors.

As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal–semiconductor interface properties. We have constructed a reconfigurable logic device based on a WSe2transistor with a nanofloating gate and split-gates through van der Waals integration. This device achieves a small Schottky barrier height due to the van der Waals contacts. By varying the split-gate biases, we can realize volatile reconfigurable homojunctions as well as AND, OR, NOR, and NAND logic operations with just a single device. Furthermore, with the charge trapping effect of nanofloating gate, we can also achieve nonvolatile reconfigurable homojunctions, as well as AND and OR logic operations. The volatile and nonvolatile logic operations are similar to the short-term plasticity and long-term plasticity, respectively, of synapses in the human brain. This work offers a potential approach for creating novel reconfigurable functional electronic devices with a simple fabrication process and low cost.The research was supported by the National Natural Science Foundation of China, the Basic and Applied Basic Research Foundation of Guangdong Province,the Science and Technology Innovation Commission of Shenzhen, RSC Researcher Collaborations grant, the State Key Laboratory of Radio Frequency Heterogeneous Integration (Independent Scientific Research Program), and the NTUT-SZU Joint Research Program.

Original link:https://pubs.acs.org/doi/10.1021/acs.jpclett.4c02397

Address: Institute for Advanced Study

Shenzhen University

Nanshan District

Shenzhen, Guangdong

China 518060

Tel: +86-755-2649-2572

CopyRight@Institute for Advanced Study,Shenzhen University.