Theme: Searching for substrate-supported 2D topological materials
Speaker: Prof. Li HUANG (South University of Science and Technology of China)
Host: Research Scientist Xiaoguang LI
Location: Room 716, Health Science Center of Shenzhen University
Time：4:00pm, November 28th, 2018
Abstract:
Study of two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, is currently one of the fastest growing research areas. While these novel materialsare insulators in the bulk, their edges harbor spin-polarized gapless states with Dirac-cone-like linear energy dispersions. These unique properties make topological insulator materials well-suited for the development of spintronics and quantum computing. The functional 2D sheet often needs to be placed on a substrate in a device setting, but the electronic and topological properties of freestanding films will likely be affected by the substrate. Therefore, it is highly desirable to search for large-gap QSH states existing on a substrate while maintaining a large gap. In this talk, I will present some of the recent work we have done to search for the 2D topological materials supported on appropriate substrates based on first-principles calculations. (1) Quantum anomalous Hall (QAH): Germanene asymmetrically functionalized with H and N atoms and on CdTe(111); (2) Growth of Predicted Novel Two-Dimensional Topological Insulator Based on InBi-Si(111)-√��×√��.
Biography:
Li HUANG is an assistant professor at South University of Science and Technology of China and serves as review editor for Journal of Semiconductors. Prof. Huang’s research focuses on condensed matter physics, mainly on the study of the properties of various new energy materials and new spintronic materials by first-principles methods combined with other advanced computational simulation methods. She has made many achievements in the computational design and materials of new materials, such as novel electrical, magnetic properties, electrothermal transport properties, topological properties and defect research. Prof. Huang has published over 50 papers in SCI journals, such as Science, Physical Review Letters, Physical Review B, Applied Physics Letters, Journal of American Chemistry Society, ACS Nano, Advanced Materials, Advanced Functional Materials, Energy & Environmental Society, Nano Energy and has been invited to deliver academic reports on many international conferences.
