报告主题：二维半导体载流子迁移率与介电界面性质的调控

主讲人：杨明助理教授（香港理工大学）

主持人：李晓光

时 间：2024年5月17日周五15：00

地 点：深圳大学致知楼706

嘉宾简介：

杨明博士目前是香港理工大学应用物理系助理教授、博士生导师，IEEE EDS & SSC香港分会秘书, IEEE Transactions on Emerging Topics in Computational Intelligence杂志副主编。杨明博士目前主要研究兴趣是发展高通量筛选、高通量第一性原理计算、基于物理的机器学习等研究能源与催化材料、二维材料的物理性质与器件应用，理解与调控二维半导体材料与介电层、金属接触的界面性质。到目前为止，已在国际权威刊物如Nat. Materials、Nat. Electronics、Nat. Nanotechn.、Nat. Commun.、JACS、Adv. Mater.等发表超过180篇论文(Google Scholar上引用次数超过6500、H-index 43)，拥有3项PCT专利，并贡献石墨烯手册、二维过渡金属硫化物等专著的相关章节。

报告摘要：

2D semiconductors such as MoS2 could potentially replace silicon in future electronic devices. However, the low carrier mobility in the 2D MoS2 at RT and its inferior interface with high-k dielectrics, remain critical challenges for high-performance nanoelectronics. In this talk, we show that by introducing rippled lattice structure in 2D MoS2, a record-high carrier mobility can be achieved at room temperature. For the interface between conventional high-k dielectrics and 2D MoS2, we find that hydrogenation is a desired approach to passivate the dangling bonds and improve the interface properties, in which the hydrogenation only selectively occurs at high-k dielectrics. Finally, we report a data-driven approach to accelerate the development of various promising inorganic molecular crystals as the high-performance high-k dielectrics for 2D electronic devices. These results deepen the understanding of the carrier mobility in 2D semiconductors and their interface with high-k dielectrics, and could be useful for developing a broad range of high-performance 2D electronic and optoelectronic devices.