Theme: Oxide Neuromorphic Transistor and its brain-like Chip Application
Speaker: Prof. Qing Wan
Host: Research Scientist Hai Xiong
Location: Room L1-707, Science and Engineering Building
Time: at 14:30, October 24th, 2018

About the Speaker:

Qing Wan, born in August 1976, is awardee of the National Science Fund for Distinguished Young Scholars(2014) and currently serves as a professor and doctoral supervisor of the School of Electronic Science and Engineering of Nanjing University. He graduated from Department of materials of Zhejiang University in 1998 , and in 2004, he graduated from Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences with a Ph.D. degree in Microelectronics. Later, he conducted postdoctoral research at Cambridge University, University of Michiga and Stanford University and enganged in reserach and teaching at Hunan University, Ningbo Institute of Industrial Technology of CAS and Nanjing University. Prof. Wan primarily studies oxide semiconductors and new concept device applications and has published over 180 papers in international journals such as Nature Communications, Advanced Materials, Nano Letters, IEEE EDL and Appl. Phys. Letts, over 18,000 citations. He has reveived the Special Award of the Dean of the Academy of Sciences, the 100 Excellent Doctoral Dissertations of the National Science, the First Prize of the Natural Science of the Ministry of Education, the First Prize of the Science and Technology of Zhejiang Province, the China Youth Science and Technology Award, National Outstanding Youth Fund and was selected into the National High Level Talents Special Support Plan.

Talk Abstract:
The human brain is a 20W distributed, intelligent biological computer connected by as many as 1015 Synapses. Neurons are the basic unit of memory and information processing in the brain, while synapses are are the functional connections between neurons and the key parts of information transmission and processing. The development of new concept devices with synaptic and neuronal functions from the bottom is of great significance for the construction of neuromorphic systems and the development of truly brain-like chips. Prof. Wan's group is the first research group in the world to develop ultra-low pressure amorphous oxide double layer transistor using interfacial proton dielectric layer control and explore its application in the field of neuromorphic electronics, which discovered large double-layer capacitors in phosphorus-doped SiO2 nanoparticle films, chitosan films,graphene oxide, etc., and realized the amorphous oxide semiconductor by using the above solid electrolyte film as a gate dielectric in 2009. On this basis, a series of oxide-based double-layer capacitors were developed, realizing bionic functions of short/long range memory, peak time-dependent plasticity (STDP), high-pass filtering, multi-channel impulse information integration regulation and neuronal algorithm, and helping the development of brain-like chip and application of neuromorphic engineering applications. The above research results can form the basis of physical and device for the development of "brain-like chips" and neuromorphological engineering applications.